text:
Nominative determinism
From Wikipedia, the free encyclopedia
Jump to: navigation, search
Nominative determinism is the hypothesis that people tend to gravitate towards areas of work that fit their names. The term was first used in the magazine New Scientist in 1994, after the magazine's humorous Feedback column noted several studies carried out by researchers with remarkably fitting surnames. These included a book on polar explorations by Daniel Snowman and an article on urology by researchers named Splatt and Weedon. These and other examples led to light-hearted speculation that some sort of psychological effect was at work. Since the term appeared, nominative determinism has been an irregularly recurring topic in New Scientist, as readers continue to submit examples. Nominative determinism differs from the related concept aptronym, and its synonyms aptonym, namephreak, and Perfect Fit Last Name, in that it focusses on causality. "Aptronym" merely means the name is fitting, without saying anything about why it has come to fit.
The idea that people are drawn to professions that fit their name was suggested by psychologist Carl Jung, citing as an example Sigmund Freud who studied pleasure and whose surname means "joy". A few recent empirical studies have indicated that certain professions are disproportionately represented by people with appropriate surnames (and sometimes given names), though the methods of these studies have been challenged. One explanation for nominative determinism is implicit egotism, which states that humans have an unconscious preference for things they associate with themselves. An alternative explanation is genetic: a person might be named Smith or Taylor because that was originally their occupation, and they would pass on their genes to their descendants, including an aptitude for activities involving strength in the case of Smith, or dexterity in the case of Taylor.
Contents
[hide]
1 Background
2 Definition
3 Research
3.1 Theoretical framework
3.2 Empirical evidence
4 References
4.1 Footnotes
4.2 Notes
4.3 Sources
4.3.1 Bibliography
4.3.2 Online sources
Background[edit]
Before people could gravitate towards areas of work that matched their names, many people were given names that matched their area of work.[1] The way people are named has changed over time.[2] In pre-urban times people were only known by a single name – for example, the Anglo-Saxon name Beornheard.[3][A] Single names were chosen for their meaning or given as nicknames.[3][5] In England it was only after the Norman conquest that surnames were added, although there were a few earlier bynames that were not hereditary,[3][6] such as Edmund Ironside.[3] Surnames were created to fit the person, mostly from patronyms (e.g., John son of William becomes John Williamson), occupational descriptions (e.g., John Carpenter), character or traits (e.g., John Long), or location (e.g., John from Acton became John Acton).[1] Names were not initially hereditary; only by the mid-14th century did they gradually become so.[7] Surnames relating to trades or craft were the first to become hereditary, as the craft often persisted within the family for generations.[8][B] The appropriateness of occupational names has decreased over time, because tradesmen did not always follow their fathers:[2] an early example from the 14th century is "Roger Carpenter the pepperer".[8]
Another aspect of naming was the importance attached to the wider meaning contained in a name. In 17th-century England it was believed that choosing a name for a child should be done carefully. Children should live according to the message contained in, or the meaning of their names.[12] In 1652 William Jenkyn, an English clergyman, argued that first names should be "as a thread tyed about the finger to make us mindful of the errand we came into the world to do for our Master".[13] In 1623, at a time when Puritan names such as Faith, Fortitude and Grace were appearing for the first time, English historian William Camden wrote that names should be chosen with "good and gracious significations", as they might inspire the bearer to good actions.[14][15] With the rise of the British Empire the English naming system and English surnames spread across large portions of the globe.[16]
By the beginning of the 20th century, Smith and Taylor were two of the three most frequently occurring English surnames; both were occupational, though few smiths and tailors remained.[17][C] When a correspondence between a name and an occupation did occur, it became worthy of note. In an 1888 issue of the Kentish Note Book magazine a list appeared with "several carriers by the name of Carter; a hosier named Hosegood; an auctioneer named Sales; and a draper named Cuff".[19] Since then, a variety of terms for the concept of a close relationship between name and occupation have emerged. The term aptronym is thought to have been coined in the early 20th century by the American newspaper columnist Franklin P. Adams.[20] Linguist Frank Nuessel coined aptonym, without an "r", in 1992.[21] Other synonyms include euonym,[22] Perfect Fit Last Name (PFLN),[23] and namephreak.[24] In literary science a name that particularly suits a character is called a charactonym.[25] Notable authors who frequently used charactonyms as a stylistic technique include Charles Dickens (e.g., Mr. Gradgrind, the tyrannical schoolmaster)[26] and William Shakespeare (e.g., the lost baby Perdita in The Winter's Tale).[27] Unlike nominative determinism, the concept of aptronym and its synonyms do not say anything about causality, i.e. why the name has come to fit.[28]
Because of the potentially humorous nature of aptronyms a number of newspapers have collected them. San Francisco Chronicle columnist Herb Caen reported irregularly on reader-submitted gems, including substitute teacher Mr. Fillin, piano teacher Patience Scales, and the Vatican's spokesman on the evils of rock 'n roll, Cardinal Rapsong.[29] Similarly, the journalist Bob Levey on occasion listed examples sent in by readers of his column in The Washington Post: a food industry consultant named Faith Popcorn, a lieutenant called Sergeant, and a tax accountant called Shelby Goldgrab.[23][30] Dutch newspaper Het Parool had an irregularly featured column called "Nomen est omen" with Dutch examples.[31] Individual name collectors have also published books of aptronyms.[32][33] Onomastic scholar R.M. Rennick called for more verification of aptronyms appearing in newspaper columns and books.[34] Lists of aptronyms in science, medicine, and law are more reliable as they tend to be drawn from easily verifiable sources.[35][36]
Definition[edit]
Nominative determinism, literally "name-driven outcome",[37] is the hypothesis that people tend to gravitate towards areas of work which reflect their names. The name fits because people, possibly subconsciously, made themselves fit. Nominative determinism differs from the concept of aptronyms in that it focusses on causality.[28]
The term has its origin in the "Feedback" column of the British magazine New Scientist in 1994. A series of events raised the suspicion of its editor, John Hoyland, who wrote in the 5 November issue:
We recently came across a new book, Pole Positions—The Polar Regions and the Future of the Planet, by Daniel Snowman.[38] Then, a couple of weeks later, we received a copy of London Under London—A Subterranean Guide, one of the authors of which is Richard Trench.[39] So it was interesting to see Jen Hunt of the University of Manchester stating in the October issue of The Psychologist: "Authors gravitate to the area of research which fits their surname."[40] Hunt's example is an article on incontinence in the British Journal of Urology by A. J. Splatt and D. Weedon.[41]
We feel it's time to open up this whole issue to rigorous scrutiny. You are invited to send in examples of the phenomenon in the fields of science and technology (with references that check out, please) together with any hypotheses you may have on how it comes about.[42]
Feedback editors John Hoyland and Mike Holderness subsequently adopted the term nominative determinism as suggested by reader C. R. Cavonius. The term first appeared in the 17 December issue.[43] Even though the magazine tried to ban the topic numerous times over the decades since,[44] readers kept sending in curious examples. These included the U.S. Navy spokesman put up to answer journalists' questions about the Guantanamo Bay detention camp, one Lieutenant Mike Kafka;[45] authors of the book The Imperial Animal Lionel Tiger and Robin Fox;[46] and the UK Association of Chief Police Officers' spokesman on knife crime, Alfred Hitchcock.[47]
As used in New Scientist the term nominative determinism only applies to work.[42][48][19][44] In contributions to other newspapers New Scientist writers have stuck to this definition, with the exception of editor Roger Highfield in a column in the Evening Standard, in which he included "key attributes of life".[49][50][51][D]
Prior to 1994 other terms for the suspected psychological effect were used sporadically. Onomastic determinism was used as early as 1970 by Roberta Frank.[52] German psychologist Wilhelm Stekel spoke of "Die Verpflichtung des Namens" (the obligation of the name) in 1911.[53] Outside of science, cognomen syndrome was used by playwright Tom Stoppard in his 1972 play Jumpers.[54] In Ancient Rome the predictive power of a person's name was captured by the Latin proverb "nomen est omen", meaning the name is a sign.[55] This saying is still in use today in English[55] and other languages such as French,[56] German,[57] Italian,[58] Dutch,[59] and Slovenian.[60]
New Scientist coined the term nominative contradeterminism for people who move away from their name, creating a contradiction between name and occupation. Examples include Andrew Waterhouse, a professor of wine,[61] would-be doctor Thomas Edward Kill, who subsequently changed his name to Jirgensohn,[62] and the Archbishop of Manila, Cardinal Sin.[63][E] The synonym inaptronym is also sometimes used.[67]
Research[edit]
Theoretical framework[edit]
The first scientists to discuss the concept that names had a determining effect were early 20th-century German psychologists.[68] Wilhelm Stekel spoke of the "obligation of the name" in the context of compulsive behaviour and choice of occupation;[53] Karl Abraham wrote that the determining power of names might be partially caused by inheriting a trait from an ancestor who was given a fitting name. He made the further inference that families with fitting names might then try to live up to their names in some way.[69] In 1952 Carl Jung referred to Stekel's work in his theory of synchronicity (events without causal relationship that yet seem to be meaningfully related):[70]
We find ourselves in something of a quandary when it comes to making up our minds about the phenomenon which Stekel calls the "compulsion of the name". What he means by this is the sometimes quite gross coincidence between a man's name and his peculiarities or profession. For instance ... Herr Feist (Mr Stout) is the food minister, Herr Rosstäuscher (Mr Horsetrader) is a lawyer, Herr Kalberer (Mr Calver) is an obstetrician ... Are these the whimsicalities of chance, or the suggestive effects of the name, as Stekel seems to suggest, or are they "meaningful coincidences"?[71]
Jung listed striking instances among psychologists—including himself: "Herr Freud (Joy) champions the pleasure principle, Herr Adler (Eagle) the will to power, Herr Jung (Young) the idea of rebirth ..."[71]
In 1975 psychologist Lawrence Casler called for empirical research into the relative frequencies of career-appropriate names to establish if there is an effect at work or whether we are being "seduced by Lady Luck". He proposed three possible explanations for nominative determinism: one's self-image and self-expectation being internally influenced by one's name; the name acting as a social stimulus, creating expectations in others that are then communicated to the individual; and genetics – attributes suited to a particular career being passed down the generations alongside the appropriate occupational surname.[72]
In 2002 the researchers Pelham, Mirenberg, and Jones explored Casler's first explanation, arguing that people have a basic desire to feel good about themselves and behave according to that desire. These automatic positive associations would influence feelings about almost anything associated with the self. Given the mere ownership effect, which states that people like things more if they own them, the researchers theorised that people would develop an affection for objects and concepts that are associated with the self, such as their name.[F] They called this unconscious power implicit egotism.[75] Uri Simonsohn suggested that implicit egotism only applies to cases where people are nearly indifferent between options, and therefore it would not apply to major decisions such as career choices. Low-stakes decisions such as choosing a charity would show an effect.[76] Raymond Smeets theorised that if implicit egotism stems from a positive evaluation of the self, then people with low self-esteem would not gravitate towards choices associated with the self, but possibly away from them. A lab experiment confirmed this.[77]
Empirical evidence[edit]
Igor Judge, a former judge
Those with fitting names give differing accounts of the effect of their name on their career choices. Igor Judge, former Lord Chief Justice of England and Wales, said he has no recollection of anyone commenting on his destined profession when he was a child, adding "I'm absolutely convinced in my case it is entirely coincidental and I can't think of any evidence in my life that suggests otherwise." James Counsell on the other hand, having chosen a career in law just like his father, his sibling, and two distant relatives, reported having been spurred on to join the bar from an early age and he cannot remember ever wanting to do anything else.[78] Sue Yoo, an American lawyer, said that when she was younger people urged her to become a lawyer because of her name, which she thinks may have helped her decision.[79] Weather reporter Storm Field was not sure about the influence of his name; his father, also a weather reporter, was his driving force.[80] Psychology professor Lewis Lipsitt, a lifelong collector of aptronyms,[81] was lecturing about nominative determinism in class when a student pointed out that Lipsitt himself was subject to the effect since he studied babies' sucking behaviour. Lipsitt said "That had never occurred to me."[82] Church of England vicar Reverend Michael Vickers, who denied being a Vickers had anything to do with him becoming a vicar, suggesting instead that in some cases "perhaps people are actually escaping from their name, rather than moving towards their job".[50]
I remember as a child people saying to me "of course you are going to be a barrister because of your name". How much is down to the subconscious is difficult to say, but the fact that your name is similar may be a reason for showing more interest in a profession than you might otherwise. Any link in adult eyes may seem trivial but to someone in their formative years starting to think about their career it's possible it may have an effect.
— James Counsell, barrister.[78]
While reports by owners of fitting names are of interest, some scientists have questioned their value in deciding whether nominative determinism is a real effect.[78][83] Instead, they argue that the claim that a name affects life decisions is an extraordinary one that requires extraordinary evidence.[84] To select only those cases that seem to give evidence for nominative determinism is to ignore those that do not. Analysis of large numbers of names is therefore needed.[85] In 2002 Pelham, Mirenberg, and Jones analysed various databases containing first names, surnames, occupations, cities and states. In one study they concluded that people named Dennis gravitate towards dentistry. They did this by retrieving the number of dentists called Dennis (482) from a database of US dentists. They then used the 1990 Census to find out which male first name was the next most popular after Dennis: Walter. The likelihood of a US male being called Dennis was 0.415% and the likelihood of a US male being called Walter was 0.416%. The researchers then retrieved the number of dentists called Walter (257). Comparing the relative frequencies of Dennis and Walter led them to their conclusion that the name Dennis is over-represented in dentistry.[86] However, in 2011, Uri Simonsohn published a paper in which he criticized Pelham et al. for not considering confounding factors and reported on how the popularity of Dennis and Walter as baby names has varied over the decades. Given Walter was a relatively old-fashioned name it was far more likely for Pelham et al. to find people named Dennis to have any job, not just that of dentist, and people named Walter to be retired. Simonsohn did indeed find a disproportionally high number of Dennis lawyers compared to Walter lawyers.[87][G]
Aware of Simonsohn's critical analyses of their earlier methods, Pelham and Mauricio published a new study in 2015, describing how they now controlled for gender, ethnicity, and education confounds.[H] In one study they looked at census data and concluded that men disproportionately worked in eleven occupations whose titles matched their surnames, for example, baker, carpenter, and farmer.[92]
In 2009 Michalos reported the results of an analysis of the occurrences of people with the surname Counsell registered as independent barristers in England and Wales versus those with the name in England and Wales as whole. Given the low frequency of the name in England and Wales as a whole he expected to find no one registered, but three barristers named Counsell were found.[55]
In 2015 researchers Limb, Limb, Limb and Limb published a paper on their study into the effect of surnames on medical specialisation. They looked at 313,445 entries in the medical register from the General Medical Council, and identified surnames that were apt for the speciality, for example, Limb for an orthopaedic surgeon, and Doctor for medicine in general. They found that the frequency of names relevant to medicine and to subspecialties was much greater than expected by chance. Specialties that had the largest proportion of names specifically relevant to that specialty were those for which the English language has provided a wide range of alternative terms for the same anatomical parts (or functions thereof). Specifically, these were genitourinary medicine (e.g., Hardwick and Woodcock) and urology (e.g., Burns, Cox, Ball). Neurologists had names relevant to medicine in general, but far fewer had names directly relevant to their specialty (1 in every 302). Limb, Limb, Limb and Limb did not report on looking for any confounding variables.[93] In 2010 Abel came to a similar conclusion. In one study he compared doctors and lawyers whose first or last names began with three-letter combinations representative of their professions, for example, "doc", "law", and likewise found a significant relationship between name and profession. Abel also found that the initial letters of physicians' last names were significantly related to their subspecialty. For example, Raymonds were more likely to be radiologists than dermatologists.[94] Two separate studies by Krajick and Neimi in 2005, both analysing large samples of names of scientists, showed 1.35% of geologists having names referring to their field, and in political science, 1.26%.[95][96]
As for Casler's third possible explanation for nominative determinism, genetics, researchers Voracek, Rieder, Stieger, and Swami found some evidence for it in 2015. They reported that today's Smiths still tend to have the physical capabilities of their ancestors who were smiths. People called Smith reported above-average aptitude for strength-related activities. A similar aptitude for dexterity-related activities among people with the surname Tailor, or equivalent spellings thereof, was found, but it was not statistically significant. In the researchers' view a genetic-social hypothesis appears more viable than the hypothesis of implicit egotism effects.[97]
References[edit]
Footnotes[edit]
Jump up ^ Even the Romans, whose naming system is generally assumed to have used three names, started out with a single name, e.g., Romulus. Over the course of fourteen centuries this then first evolved to two names, to three names (e.g., Marcus Tullius Cicero, where Marcus is the praenomen, Tullius the nomen gentilicium, and Cicero the cognomen), back to two names, and finally one name again.[4]
Jump up ^ Ancient Roman fathers passed on their cognomen to their children as well.[9] According to Gaius Plinius Secundus, better known as Pliny the Elder, cognomina derived from occupations were initially taken from agriculture – for example, Cicero means chickpea. Ergo, Marcus Tullius Cicero, the orator, was a descendent of a grower of chickpeas,[10] although it is also said the cognomen was given for the shape of the nose being similar to that of a chickpea.[11]
Jump up ^ Over time many surnames in patrilineal systems go extinct, sometimes leaving a few to dominate, depending on factors such as number of male children, immigration and merging women's surnames with their spouses upon marriage. A Korean surname has a 43% chance of being either Kim, Lee or Park. The Galton–Watson process models mathematically how much chance a surname has to survive. Under constant assumptions of 1 in 3 chance of 0, 1 or 2 sons, there is a 67% chance that by the fourth generation the surname has died out.[18]
Jump up ^ Others have extended the area of influence; for example researchers Keaney et al. entitled their study into the relationship between people called Brady and those who had pacemakers inserted for bradycardia "The Brady Bunch? New evidence for nominative determinism in patients' health".[35]
Jump up ^ Over the years New Scientist has reported on other variations on the theme, including onomatopoeic nominative determinism (e.g., European Space Agency chief mission scientist Bernard Foing),[64] nominative indeterminism (to explain the existence of hundreds of scientific articles whose authors include a Wong and a Wright),[65] and occupational preferentialism (the hypothesis that one's work influences one's taste, for example policemen liking Constable's paintings).[66]
Jump up ^ Studies have shown that most people like the name given to them.[73] Extensive research also has found a strong effect called the name-letter effect: when given the choice between letters, people significantly prefer the ones from their own name.[74]
Jump up ^ Confounding variables have also played a role in research into monogrammic determinism: in 1999 Christenfeld, Phillips, and Glynn concluded that people who have positive monograms (e.g., ACE or VIP) live significantly longer than those with negative initials (e.g., PIG or DIE). This conclusion was based on analysis of thousands of California death certificates between 1969 and 1995.[88] Morrison & Smith subsequently pointed out that this was an artifact of grouping data by age at death. Frequency of initials changing over time could be a confounding variable. Indeed when grouping the same data by birth year, they found no statistically significant relationship between initials and longevity.[89]
Jump up ^ Initially Pelham and colleagues defended their methods in a rebuttal Simonsohn assessed as also lacking in diligence.[90][91]
Notes[edit]
^ Jump up to: a b Weekley 1914, p. 2.
^ Jump up to: a b Fowler 2012, p. 11.
^ Jump up to: a b c d Weekley 1914, p. 68.
Jump up ^ Salway 1994, p. 124–126.
Jump up ^ Weekley 1914, p. 71.
Jump up ^ McKinley 1990, pp. 25–34.
Jump up ^ Weekley 1914, p. viii.
^ Jump up to: a b Weekley 1914, p. 143.
Jump up ^ Salway 1994, p. 127.
Jump up ^ Wilson 2003, p. 10.
Jump up ^ McKeown 2010, p. 22.
Jump up ^ Smith-Bannister 1997, p. 11.
Jump up ^ Jenkyn 1652, p. 7.
Jump up ^ Camden 1984, p. 43.
Jump up ^ Fowler 2012, p. 14.
Jump up ^ American Council of Learned Societies 1998, p. 180.
Jump up ^ Weekley 1914, p. 43–44.
Jump up ^ Ratzan 2004, p. 120–122.
^ Jump up to: a b Feedback 2000.
Jump up ^ Safire 2004, p. 18.
Jump up ^ Nuessel 1992.
Jump up ^ Room 1996, p. 40.
^ Jump up to: a b Levey 1985.
Jump up ^ Conrad 1999, p. 16.
Jump up ^ Merriam-Webster 1995, p. 229.
Jump up ^ Lederer 2010, p. 67.
Jump up ^ Cavill 2016, p. 365.
^ Jump up to: a b Michalos 2009, p. 16.
Jump up ^ Conrad 1999, p. 16–17.
Jump up ^ Levey 2000.
Jump up ^ Hoekstra 2011, p. 45.
Jump up ^ Dickson 1996.
Jump up ^ Hoekstra 2001.
Jump up ^ Rennick 1982, p. 193.
^ Jump up to: a b Keaney et al. 2013.
Jump up ^ Bennett 1992.
Jump up ^ Alter 2013, p. 7.
Jump up ^ Snowman 1993.
Jump up ^ Trench 1993.
Jump up ^ Hunt 1994, p. 480.
Jump up ^ Splatt & Weedon 1977.
^ Jump up to: a b Feedback 1994a.
Jump up ^ Alter 2013, p. 230.
^ Jump up to: a b Feedback 2015.
Jump up ^ Feedback 2004.
Jump up ^ Feedback 2005.
Jump up ^ Feedback 2007.
Jump up ^ Feedback 1994b.
Jump up ^ Highfield 2011.
^ Jump up to: a b Colls 2011.
Jump up ^ Telegraph staff 2011.
Jump up ^ Frank 1970, p. 25.
^ Jump up to: a b Stekel 1911, p. 110.
Jump up ^ Stoppard 1972, p. 52.
^ Jump up to: a b c Michalos 2009, p. 17.
Jump up ^ Fibbi, Kaya & Piguet 2003, p. 0.
Jump up ^ Schaffer-Suchomel 2009, p. 1.
Jump up ^ Gerber 2006, p. 0.
Jump up ^ Hoekstra 2001, p. 1.
Jump up ^ Duša & Kenda 2011, p. 0.
Jump up ^ Feedback 2014b.
Jump up ^ Slovenko 1983, p. 227.
Jump up ^ Feedback 1996.
Jump up ^ Feedback 2006.
Jump up ^ Feedback 2014a.
Jump up ^ Feedback 1999.
Jump up ^ Nunn 2014.
Jump up ^ Flugel 1930, p. 208.
Jump up ^ Abraham 1979, p. 31.
Jump up ^ Jung 1972, p. 27.
^ Jump up to: a b Jung 1972, p. 15.
Jump up ^ Casler 1975, p. 472.
Jump up ^ Joubert 1985, p. 983.
Jump up ^ Nuttin 1985, p. 353.
Jump up ^ Pelham, Mirenberg & Jones 2002, p. 479.
Jump up ^ Simonsohn 2011, p. 46.
Jump up ^ Smeets 2009, p. 11.
^ Jump up to: a b c Michalos 2009, p. 18.
Jump up ^ Silverman & Light 2011.
Jump up ^ Nelson.
Jump up ^ Cole 2001.
Jump up ^ Nevid & Rathus 2009, p. 202.
Jump up ^ Smeets 2009, p. 14.
Jump up ^ Danesi 2012, p. 84.
Jump up ^ Bateson & Martin 2001, p. 124.
Jump up ^ Pelham, Mirenberg & Jones 2002, p. 479–480.
Jump up ^ Simonsohn 2011, p. 23.
Jump up ^ Christenfeld, Phillips & Glynn 1999.
Jump up ^ Morrison & Smith 2005.
Jump up ^ Pelham & Carvallo 2011, p. 25.
Jump up ^ Simonsohn 2011b, p. 31.
Jump up ^ Pelham & Mauricio 2015, p. 692.
Jump up ^ Limb et al. 2015, p. 24–26.
Jump up ^ Abel 2010, p. 65.
Jump up ^ Krajick 2005, p. 15.
Jump up ^ Neimi 2005, p. 13.
Jump up ^ Voracek et al. 2015.
Sources[edit]
Bibliography[edit]
Abel, Ernest L. (2010). "Influence of Names on Career Choices in Medicine". Names: A Journal of Onomastics. 58 (2): 65–74. doi:10.1179/002777310X12682237914945.
Abraham, Karl (1979). "On determining the power of names (1911)". Clinical Papers and Essays on Psychoanalysis. London: Karnac Books. pp. 31–32. ISBN 978-1-78181-144-3.
Alter, Adam (2013). Drunk Tank Pink: And Other Unexpected Forces That Shape How We Think, Feel, and Behave. London: Penguin Press. ISBN 978-1-78074-264-9.
American Council of Learned Societies (1998). Surnames in the United States Census of 1790: An Analysis of National Origins of the Population. Baltimore, Maryland: Genealogical Publishing Company. ISBN 978-0-8063-0004-7.
Bateson, Patrick; Martin, Paul (2001). Design for a Life: How Biology and Psychology Shape Human Behavior. New York: Touchstone. ISBN 978-0-684-86933-9.
Bennett, H.J. (1992). "A piece of my mind. Calling Dr Doctor". JAMA. 268 (21): 3060. doi:10.1001/jama.268.21.3060. PMID 1306061.
Camden, William (1984). Dunn, R.D., ed. Remains Concerning Britain. Toronto: University of Toronto Press. ISBN 978-0-8020-2457-2.
Casler, Lawrence (1975). "Put the Blame on Name". Psychological Reports. 36 (2): 467–472. doi:10.2466/pr0.1975.36.2.467.
Cavill, Paul (2016). "Language-based approaches to names in literature". In Hough, Carole. The Oxford Handbook of Names and Naming. Oxford Handbooks in Linguistics Series. Oxford: Oxford University Press. ISBN 978-0-19-965643-1.
Christenfeld, N.; Phillips, D.P.; Glynn, L．M. (1999). "What's in a name: Mortality and the power of symbols". Journal of Psychosomatic Research. 47 (3): 241–254. doi:10.1016/S0022-3999(99)00035-5. PMID 10576473.
Cole, Kristen (9 February 2001). "Is work calling your name?". George Street Journal. 25 (17). Archived from the original on 6 December 2003. CS1 maint: BOT: original-url status unknown (link)
Conrad, Barnaby (1999). The World of Herb Caen: San Francisco 1938–1997. San Francisco: Chronicle Books. ISBN 978-0-8118-2575-7.
Danesi, Marcel (2012). Linguistic Anthropology: A Brief Introduction. Toronto: Canadian Scholars' Press. ISBN 978-1-55130-489-2.
Dickson, Paul (1996). What's in a name?: Reflections of an Irrepressible Name Collector. Springfield, Massachusetts: Merriam-Webster. ISBN 978-0-87779-613-8.
Duša, Zdravko; Kenda, Marjetka (2011). Nomen est omen: Čiginj in njegova imena (in Slovenian). Volče, Slovenia: Myra Locatelli. ISBN 978-961-92522-5-3.
Flugel, Ingeborg (1930). "On the significance of names". British Journal of Medical Psychology. 10 (2): 208–213. doi:10.1111/j.2044-8341.1930.tb01017.x.
Feedback (5 November 1994a). "Feedback". New Scientist (1950). Archived from the original on 24 September 2016.
Feedback (17 December 1994b). "Feedback". New Scientist (1956). Archived from the original on 26 September 2016.
Feedback (16 November 1996). "Feedback". New Scientist (2056). Archived from the original on 6 October 2016.
Feedback (16 October 1999). "Feedback". New Scientist (2208). Archived from the original on 8 October 2016.
Feedback (20 May 2000). "Feedback". New Scientist (2239). Archived from the original on 11 October 2016.
Feedback (10 July 2004). "Feedback". New Scientist (2455). Archived from the original on 14 October 2016.
Feedback (9 November 2005). "Feedback". New Scientist (2525). Archived from the original on 15 October 2016.
Feedback (4 October 2006). "Feedback". New Scientist (2572). Archived from the original on 16 October 2016.
Feedback (9 May 2007). "Feedback". New Scientist (2603). Archived from the original on 17 October 2016.
Feedback (19 February 2014a). "Feedback: All shall have pills". New Scientist (2957). Archived from the original on 25 October 2016.
Feedback (23 July 2014b). "Feedback: A whole world of Tweet". New Scientist (2979). Archived from the original on 28 October 2016.
Feedback (3 June 2015). "Feedback: Scatological scorecards". New Scientist (3024). Archived from the original on 1 November 2016.
Fibbi, Rosita; Kaya, Bülent; Piguet, Etienne (2003). Nomen est omen: quand s' appeler Pierre, Afrim ou Mehmet fait la différence (PDF) (in French). Bern: Fonds National Suisse, Direction du programme PNR43. ISBN 978-3-908117-69-8.
Fowler, Alastair (2012). Literary Names: Personal Names in English Literature. Oxford: Oxford University Press. ISBN 978-0-19-165099-4.
Frank, Roberta (1970). "Onomastic Play in Kormakr's Verse: the name Steingerðr". Mediaeval Scandinavia. 3: 7–34.
Gerber, Sophia (2006). Nomen est omen - Morfologia dei nomi propri di persona italiani (in Italian). Munich: GRIN Verlag. ISBN 978-3-638-56044-3.
Hoekstra, Hans (2001). Naam & Faam. Amsterdam: Nijgh & Van Ditmar. ISBN 978-90-388-3107-7.
Hunt, Jen (1994). "The Psychology of Reference Hunting" (PDF). The Psychologist. 7 (10): 480.
Jenkyn, William (1652). Exposition of the epistle of Jude. Bungay, England: John Guilds and son.
Joubert, Charles E. (1985). "Factors Related To Individuals Attitudes Toward Their Names". Psychological Reports. 57 (3): 983–986. doi:10.2466/pr0.1985.57.3.983.
Jung, Carl (1972). Synchronicity – An Acausal Connecting Principle. London: Routledge and Kegan Paul. ISBN 978-0-7100-7397-6.
Keaney, John J.; Groarke, John D.; Galvin, Zita; McGorrian, Catherine; McCann, Hugh A.; Sugrue, Declan; Keelan, Edward; Galvin, Joseph; Blake, Gavin; Mahon, Niall G.; O'Neill, James (2013). "The Brady Bunch? New evidence for nominative determinism in patients' health: retrospective, population based cohort study". British Medical Journal. 347: f6627. doi:10.1136/bmj.f6627.
Krajick, Kevin (2005). "The 'Name Number' for Geology, and for Other Professions". Annals of Improbable Research. 11 (2): 14–15. doi:10.3142/107951405781748030.
Lederer, Richard (2010). Crazy English. New York: Simon and Schuster. ISBN 978-1-4391-3894-6.
Limb, C.; Limb, R.; Limb, C.; Limb, D. (2015). "Nominative determinism in hospital medicine". The Bulletin. 97 (1): 24–26. doi:10.1308/147363515X14134529299420.
McKeown, J. C. (2010). A Cabinet of Roman Curiosities: Strange Tales and Surprising Facts from the World's Greatest Empire. Oxford: Oxford University Press. ISBN 978-0-19-975278-2.
McKinley, Richard (1990). A History of British Surnames. Taylor & Francis.
Merriam-Webster (1995). Merriam-Webster's Encyclopedia of Literature. Springfield, Massachusetts: Merriam-Webster. ISBN 978-0-87779-042-6.
Michalos, Christina (2009). "In the Name of the Law". Counsel. 25 (4): 16–18.
Morrison, Stilian; Smith, Gary (2005). "Monogrammatic determinism?". Psychosomatic Medicine. 67 (5): 820–824. doi:10.1097/01.psy.0000181283.51771.8a.
Neimi, Richard (2005). "The Name Number (s) for Political Science" (PDF). Annals of Improbable Research. 11 (4): 13–14.
Nevid, Jeffrey S.; Rathus, Spencer A. (2009). Psychology and the Challenges of Life - Adjustment and Growth. Hoboken, New Jersey: John Wiley & Sons. ISBN 978-0-470-38362-9.
Nuessel, Frank (1992). The Study of Names. Santa Barbara, California: Greenwood Press. ISBN 978-0-313-28356-7.
Nuttin, Jozef M. (1985). "Narcissism beyond Gestalt and awareness: The name–letter effect". European Journal of Social Psychology. 15 (3): 353–361. doi:10.1002/ejsp.2420150309.
Pelham, B.; Mirenberg, Matthew C.; Jones, John T. (2002). "Why Susie sells seashells by the seashore: Implicit egotism and major life decisions". Journal of Personality and Social Psychology. 82 (4): 469–487. doi:10.1037/0022-3514.82.4.469. PMID 11999918.
Pelham, Brett; Carvallo, Mauricio (2011). "The surprising potency of implicit egotism: A reply to Simonsohn". Journal of Personality and Social Psychology. 101 (1): 25–30. doi:10.1037/a0023526. PMID 21688926.
Pelham, Brett; Mauricio, Carvallo (2015). "When Tex and Tess Carpenter Build Houses in Texas: Moderators of Implicit Egotism". Self and Identity. 4 (6): 692–723. doi:10.1080/15298868.2015.1070745.
Ratzan, Lee (2004). Understanding Information Systems: What They Do and why We Need Them. Chicago: American Library Association. ISBN 978-0-8389-0868-6.
Rennick, R.M. (1982). "The Alleged "Hogg Sisters", or Simple Ground Rules for Collectors of "Odd" Names". Names. 30 (3): 193–198. doi:10.1179/nam.1982.30.3.193.
Room, Adrian (1996). An Alphabetical Guide to the Language of Name Studies. Lanham, Maryland: Scarecrow Press. ISBN 978-0-8108-3169-8.
Safire, William (2004). No Uncertain Terms: More Writing from the Popular "On Language" Column in The New York Times Magazine. New York: Simon and Schuster. ISBN 978-0-7432-5812-8.
Salway, Benet (1994). "What's in a Name? A Survey of Roman Onomastic Practice from c. 700 B.C. to A.D. 700". The Journal of Roman Studies. 84: 124–145. doi:10.2307/300873. JSTOR 300873.
Schaffer-Suchomel, Joachim (2009). Nomen est Omen: Die verborgene Botschaft der Vornamen - Von Adam bis Zarah (in German). Munich: Goldmann Arkana. ISBN 978-3-641-01672-2.
Simonsohn, Uri (2011). "Spurious? Name similarity effects (implicit egotism) in marriage, job, and moving decisions". Journal of Personality and Social Psychology. 101 (1): 1–24. doi:10.1037/a0021990. PMID 21299311.
Simonsohn, Uri (2011b). "In defense of diligence: A rejoinder to Pelham and Carvallo (2011)". Journal of Personality and Social Psychology. 101 (1): 31–33. doi:10.1037/a0023232.
Slovenko, R. (1983). "The Destiny Of A Name". Journal of Psychiatry and Law. 11 (2): 227–270.
Smeets, Raymond (2009). On the Preference for Self-related Entities: The Role of Positive Self-associations in Implicit Egotism Effects. Nijmegen, the Netherlands: UB Nijmegen. ISBN 978-90-90-24290-3.
Smith-Bannister, Scott (1997). Names and Naming Patterns in England, 1538–1700. Oxford: Clarendon Press. ISBN 978-0-19-820663-7.
Snowman, Daniel (1993). Pole Positions: Polar Regions and the Future of the Planet. London: Hodder & Stoughton. ISBN 978-0-340-54068-8.
Splatt, A. J.; Weedon, D. (1977). "The Urethral Syndrome: Experience with the Richardson Urethroplasty". British Journal of Urology. 49 (2): 173–176. doi:10.1111/j.1464-410X.1977.tb04095.x. PMID 870138.
Stekel, Wilhelm (1911). "Die Verpflichtung des Namens". Zeitschrift für Psychotherapie und medizinische Psychologie (in German). 3: 110–114.
Stoppard, Tom (1972). Jumpers. London: Faber & Faber. ISBN 978-0-571-14569-0.
Trench, Richard (1993). London Under London: A Subterranean Guide (2 ed.). London: John Murray. ISBN 978-0-7195-5288-5.
Voracek, Martin; Rieder, Stephan; Stieger, Stefan; Swami, Viren (2015). "What's in a Surname? Physique, Aptitude, and Sports Type Comparisons between Tailors and Smiths". PLoS ONE. 10 (7): 699–702. Bibcode:2015PLoSO..1031795V. doi:10.1371/journal.pone.0131795. PMC 4498760  . PMID 26161803.
Weekley, Ernest (1914). The Romance of Names (PDF). London: John Murray.
Wilson, Stephen (2003). The Means Of Naming: A Social History. London: Routledge. ISBN 978-1-135-36836-4.
Online sources[edit]
Colls, Tom (20 December 2011). "When the name fits the job". BBC Radio 4. Archived from the original on 13 September 2016. Retrieved 12 September 2016.
Highfield, Roger (24 March 2011). "The name game - the weird science of nominative determinism". The Evening Standard. Archived from the original on 28 September 2016. Retrieved 12 September 2016.
Hoekstra, Hans (16 April 2011). "Nomen est omen" (PDF). Het Parool (in Dutch). Archived from the original (PDF) on 1 October 2016. Retrieved 12 September 2016.
Levey, Bob (20 November 1985). "Bob Levey's Washington". The Washington Post. Retrieved 12 September 2016.
Levey, Bob (29 August 2000). "Bob Levey's Washington". The Washington Post. Archived from the original on 23 September 2016. Retrieved 12 September 2016.
Nelson, Graham. "Meet ordinary humans whose names shaped their destiny". The Huffington Post. Archived from the original on 20 September 2016. Retrieved 12 September 2016.
Nunn, Gary (31 October 2014). "Reckless by name, reckless by nature?". The Guardian. Archived from the original on 16 September 2016. Retrieved 12 September 2016.
Silverman, Rachel Emma; Light, Joe (21 June 2011). "Dr. Chopp, Meet Congressman Weiner". The Wall Street Journal. Archived from the original on 24 September 2016. Retrieved 24 September 2016.
Telegraph staff (20 December 2011). "A person's surname can influence their career, experts claim". The Telegraph. Archived from the original on 15 September 2016. Retrieved 12 September 2016.
Retrieved from "https://en.wikipedia.org/w/index.php?title=Nominative_determinism&oldid=835403044"
Categories:
Names
Semantics
Cognitive biases
Employment
Hidden categories:
Featured articles
Use dmy dates from October 2016
CS1 maint: BOT: original-url status unknown
CS1 Slovenian-language sources (sl)
CS1 French-language sources (fr)
CS1 Italian-language sources (it)
CS1 German-language sources (de)
CS1 Dutch-language sources (nl)
Navigation menu
Personal tools
Not logged in
Talk
Contributions
Create account
Log in
Namespaces
Article
Talk
Variants
Views
Read
Edit
View history
More
Search
Navigation
Main page
Contents
Featured content
Current events
Random article
Donate to Wikipedia
Wikipedia store
Interaction
Help
About Wikipedia
Community portal
Recent changes
Contact page
Tools
What links here
Related changes
Upload file
Special pages
Permanent link
Page information
Wikidata item
Cite this page
Print/export
Create a book
Download as PDF
Printable version
Languages
Čeština
Edit links
This page was last edited on 8 April 2018, at 14:11.
Text is available under the Creative Commons Attribution-ShareAlike License; additional terms may apply. By using this site, you agree to the Terms of Use and Privacy Policy. Wikipedia® is a registered trademark of the Wikimedia Foundation, Inc., a non-profit organization.
Privacy policy
About Wikipedia
Disclaimers
Contact Wikipedia
Developers
Cookie statement
Mobile view
Enable previews

value: mw-page-base noprint

value: mw-head-base noprint

value: This is a featured article. Click here for more information.

value: firstHeading firstHeading en

value: siteSub noprint

value: jump-to-nav mw-jump

tag: b

tag: p

value:
/wiki/Genetic_determinism
mw-redirect
Genetic determinism

value:
/wiki/Norman_conquest
mw-redirect
Norman conquest

value:
/wiki/Occupational_name
mw-redirect
Occupational name

value:
/wiki/Franklin_Pierce_Adams
mw-redirect
Franklin Pierce Adams

value:
/wiki/Literary_science
mw-redirect
Literary science

value:
/wiki/The_Psychologist_(publication)
mw-redirect
The Psychologist (publication)

value:
/wiki/British_Journal_of_Urology
mw-redirect
British Journal of Urology

value:
/wiki/Evening_Standard
mw-redirect
Evening Standard

value: float: left; clear: left; margin: 0.5em 1.4em 0.8em 0; width:35em; padding: 10px; border: 1px solid #aaa; font-size: 88%; background-color: #c6dbf7;

value:
/wiki/Genitourinary_medicine
mw-redirect
Genitourinary medicine

value:
/wiki/Marcus_Tullius_Cicero
mw-redirect
Marcus Tullius Cicero

value:
/wiki/Nomen_gentilicium
mw-redirect
Nomen gentilicium

value:
/wiki/Korean_surnames
mw-redirect
Korean surnames

value:
reflist mw-references-wrap
list-style-type: upper-alpha;

value: -moz-column-width: 20em; -webkit-column-width: 20em; column-width: 20em; list-style-type: decimal;

value: Journal of the American Medical Association

value:
nofollow
external text
//doi.org/10.1001%2Fjama.268.21.3060

value:
/wiki/PubMed_Identifier
mw-redirect
PubMed Identifier

value:
nofollow
external text
//www.ncbi.nlm.nih.gov/pubmed/1306061

value:
nofollow
external text
//doi.org/10.2466%2Fpr0.1975.36.2.467

value:
nofollow
external text
//www.ncbi.nlm.nih.gov/pubmed/10576473

value: Category:CS1 maint: BOT: original-url status unknown

value:
nofollow
external text
//doi.org/10.2466%2Fpr0.1985.57.3.983

value:
/wiki/British_Medical_Journal
mw-redirect
British Medical Journal

value:
nofollow
external text
//doi.org/10.1136%2Fbmj.f6627

value:
nofollow
external text
//doi.org/10.1002%2Fejsp.2420150309

value:
nofollow
external text
//www.ncbi.nlm.nih.gov/pubmed/11999918

value:
nofollow
external text
//doi.org/10.1037%2Fa0023526

value:
nofollow
external text
//www.ncbi.nlm.nih.gov/pubmed/21688926

value:
nofollow
external text
//doi.org/10.1179%2Fnam.1982.30.3.193

value:
nofollow
external text
//doi.org/10.2307%2F300873

value:
nofollow
external text
//www.jstor.org/stable/300873

value:
nofollow
external text
//doi.org/10.1037%2Fa0021990

value:
nofollow
external text
//www.ncbi.nlm.nih.gov/pubmed/21299311

value:
nofollow
external text
//doi.org/10.1037%2Fa0023232

value:
nofollow
external text
//www.ncbi.nlm.nih.gov/pubmed/870138

value:
nofollow
external text
//www.ncbi.nlm.nih.gov/pubmed/26161803

value: -moz-column-width: 30em; -webkit-column-width: 30em; column-width: 30em;

value: Category:Use dmy dates from October 2016

value: Category:CS1 Slovenian-language sources (sl)

value: Category:CS1 French-language sources (fr)

value: Category:CS1 Italian-language sources (it)

value: Category:CS1 German-language sources (de)

value: Category:CS1 Dutch-language sources (nl)

value: Discussion about edits from this IP address [ctrl-alt-n]

value: A list of edits made from this IP address [ctrl-alt-y]

value: You are encouraged to create an account and log in; however, it is not mandatory

value: You're encouraged to log in; however, it's not mandatory. [ctrl-alt-o]

value:
/wiki/Nominative_determinism
View the content page [ctrl-alt-c]
c

value: Discussion about the content page [ctrl-alt-t]

value: p-namespaces navigation vectorTabs p-namespaces-label

value:
p-variants
navigation
vectorMenu emptyPortlet
p-variants-label

value: Past revisions of this page [ctrl-alt-h]

value: p-views navigation vectorTabs p-views-label

value:
p-cactions
navigation
vectorMenu emptyPortlet
p-cactions-label

value:
mw-wiki-logo
/wiki/Main_Page
Visit the main page

value:
/wiki/Main_Page
Visit the main page [ctrl-alt-z]
z

value: Featured content – the best of Wikipedia

value: Find background information on current events

value:
/wiki/Special:Random
Load a random article [ctrl-alt-x]
x

value: portal navigation p-navigation p-navigation-label

value: Guidance on how to use and edit Wikipedia

value: About the project, what you can do, where to find things

value: A list of recent changes in the wiki [ctrl-alt-r]

value: portal navigation p-interaction p-interaction-label

value: List of all English Wikipedia pages containing links to this page [ctrl-alt-j]

value: Recent changes in pages linked from this page [ctrl-alt-k]

value:
/wiki/Wikipedia:File_Upload_Wizard
Upload files [ctrl-alt-u]
u

value: A list of all special pages [ctrl-alt-q]

value: Permanent link to this revision of the page

value: Link to connected data repository item [ctrl-alt-g]

value: Printable version of this page [ctrl-alt-p]

value: /static/images/wikimedia-button-1.5x.png 1.5x, /static/images/wikimedia-button-2x.png 2x

value: /static/images/poweredby_mediawiki_132x47.png 1.5x, /static/images/poweredby_mediawiki_176x62.png 2x

value:
suggestions
display: none; font-size: 13px;

value: mediawiki ltr sitedir-ltr mw-hide-empty-elt ns-0 ns-subject page-Nominative_determinism rootpage-Nominative_determinism skin-vector action-view


text:
Battle of Drepana
From Wikipedia, the free encyclopedia
Jump to: navigation, search
This article needs additional citations for verification. Please help improve this article by adding citations to reliable sources. Unsourced material may be challenged and removed. (September 2014) (Learn how and when to remove this template message)
Battle of Drepana
Part of the First Punic War
Date
249 BC
Location
Off Drepana (modern Trapani), Sicily
Result
Carthaginian victory
Belligerents
Carthage Roman Republic
Commanders and leaders
Adherbal Publius Claudius Pulcher
Strength
About 120 ships About 120 ships
Casualties and losses
None 93 ships captured or sunk
[show]
v
t
e
First Punic War
Messana
Agrigentum
Lipari Islands
Mylae
Sulci
Tyndaris
Cape Ecnomus
Aspis
Adys
Tunis
Cape Hermaeum
Panormus
1st Drepana
Lilybaeum
2nd Drepana
Mt Ercte
1st Mt Eryx
2nd Mt Eryx
Aegates Islands
The naval Battle of Drepana (or Drepanum) took place in 249 BC during the First Punic War near modern Trapani, western Sicily between the fleets of Carthage and the Roman Republic.
Contents
[hide]
1 Prelude
2 Actions and consequences
3 Aftermath
4 References
5 Notes
6 See also
7 External links
Prelude[edit]
The string of Roman naval victories, such as Mylae and Ecnomus, gave them the confidence to make a direct attack on the Carthaginian stronghold of Lilybaeum governed by Himilco. The city was blockaded by a fleet commanded by the year's consuls Publius Claudius Pulcher and Lucius Junius Pullus. However, despite the acquired Roman naval experience, the Carthaginians were still superior in open sea manoeuvring. A small squadron led by a commander named Hannibal, son of Hamilcar, managed to break the siege in broad daylight and deliver supplies to the garrison of Lilybaeum. In the night, Hannibal left the city carrying the useless cavalry horses and sailed to the harbour of Drepana, before the Romans knew what was happening.
The success of the enterprise was so stunning that the Carthaginians repeated it several times. For the Romans, this was more than a humiliation: it was annulling the whole effect of the siege, since the garrison was being fed and kept in contact with Carthage. Something had to be done.
Shortly after, a brave sailor, identified as Hannibal the Rhodian, openly defied the Roman fleet by sailing around the fleet in order to spy on the town and relay the news of the goings on inside of Lilybaeum to the Carthaginian Senate and the Carthaginian commander at the battle, Adherbal.
Actions and consequences[edit]
Pulcher, the senior consul, then decided to launch a surprise attack on the harbour of Drepana, where the defiant ships were garrisoned. The fleet sailed north from Lilybaeum in a moonless night. Carthaginian scouts did not spot the Roman ships but low visibility conditions compromised the battle formation. When they reached Drepana at sunrise, the fleet was scattered in a long, disorganized line with Pulcher's ship in the rear. Punic scouts saw the clumsy approach and the advantage of surprise was lost.
Meanwhile, on the flagship, some sources state that Pulcher, as the senior magistrate in command, took the auspices before battle, according to Roman religious requirements. The prescribed method was observing the feeding behaviour of the sacred chickens, on board for that purpose. If the chickens accepted the offered grain, then the Roman gods would be favourable to the battle. However, on that particular morning of 249 BC, the chickens refused to eat – a horrific omen. Confronted with the unexpected and having to deal with the superstitious and now terrified crews, Pulcher quickly devised an alternative interpretation. He threw the sacred chickens overboard, saying, "Let them drink, since they don't wish to eat." (Latin "Bibant, quoniam esse nolunt.)[1]
However, it is not entirely clear if this actually occurred. The contemporary historian Polybius fails to mention it, instead crediting the victory to the superior maneuverability of the Carthaginian warships, making the incident of drowning the chickens at least dubious, although the auspices almost certainly would have been taken.[2]
In the harbour, the Carthaginians did not wait to see what the Romans intended. Adherbal had similar, though less controversial, quick thoughts and ordered the evacuation of Drepana before the blockade was unavoidable. Carthage's ships thus sailed out of Drepana, passing south of the city and around two small islands in the coast to the open sea. Seeing his plan for a surprise attack fail, Pulcher ordered his fleet to regroup into battle formation. However, by then, everything was against him. The coast of Sicily was at his back and the Punic fleet ready for battle at his front.
Adherbal saw a chance for victory and ordered his right flank to attack the rear-most Roman ships. The result was an utter Roman defeat, with almost all the ships commanded by Pulcher sunk.
Aftermath[edit]
Publius Claudius Pulcher managed to escape and returned to Rome in shame, where he faced charges of treason. Unlike the Carthaginians, Romans did not execute generals for incompetence (cf. Hannibal Gisco); what brought Pulcher to the court was an accusation of sacrilege due to the chicken incident. He was convicted and sentenced to exile, with his political career finished.
In the same year, Hamilcar Barca (general Hannibal's father) led a successful campaign in Sicily and a storm mostly destroyed the other half of the Roman fleet, commanded by consul Junius Paullus. The situation was so desperate that Aulus Atilius Calatinus was appointed dictator and sent to the island to control the land warfare. The Drepana defeat so demoralized the Romans that they waited seven years before building another fleet.
References[edit]
The Fall of Carthage, by Adrian Goldsworthy, Cassel
The Rise of the Roman Empire, by Polybius
Notes[edit]
Jump up ^ Cicero, M. Tullius. De natura deorum. Perseus Digital Library. p. 2.7. Retrieved 17 February 2016. The comment is reported in indirect discourse, so the Latin here reflects what Pulcher's actual words would have been.)
Jump up ^ Lazenby, J.F. (1996). The First Punic War: A Military History. Stanford: Stanford University Press. pp. 133–134. ISBN 0-8047-2674-4.
See also[edit]
Drepana
Siege of Drepana
External links[edit]
Sheridan, Paul (2015-11-08). "The Sacred Chickens of Rome". Anecdotes from Antiquity. Retrieved 2015-11-17.
[hide]
v
t
e
Punic Wars
First Punic War
Messana
Agrigentum
Lipari Islands
Mylae
Sulci
Tyndaris
Cape Ecnomus
Aspis
Adys
Tunis
Cape Hermaeum
Panormus
1st Drepana
1st Lilybaeum
2nd Drepana
Mount Ercte
1st Mt. Eryx
2nd Mt. Eryx
Aegates
Mercenary War
Utica
Bagradas River
Hamilcar's victory with Naravas
Carthage
"The Saw"
Tunis
Second Punic War
Saguntum
Crossing of the Alps
Lilybaeum
Rhone
Ticinus
Trebia
Cissa
Lake Trasimene
Ebro River
Ager Falernus
Geronium
Cannae
1st Nola
Dertosa
2nd Nola
Decimomannu
3rd Nola
1st Beneventum
Syracuse
1st Tarentum
1st Capua
2nd Beneventum
Silarus
1st Herdonia
Upper Baetis
2nd Capua
2nd Herdonia
Numistro
Asculum
2nd Tarentum
Baecula
Grumentum
Metaurus
New Carthage
Ilipa
Guadalquivir
Carteia
Crotona
Utica
Great Plains
Cirta
Po Valley
Zama
Third Punic War
Lake Tunis
1st Nepheris
Port of Carthage
2nd Nepheris
Carthage
Military history
Coordinates: 38°01′00″N 12°31′00″E / 38.0167°N 12.5167°E / 38.0167; 12.5167
Retrieved from "https://en.wikipedia.org/w/index.php?title=Battle_of_Drepana&oldid=803791691"
Categories:
Naval battles of the First Punic War
Trapani
249 BC
240s BC conflicts
Hidden categories:
Articles needing additional references from September 2014
All articles needing additional references
Coordinates on Wikidata
Navigation menu
Personal tools
Not logged in
Talk
Contributions
Create account
Log in
Namespaces
Article
Talk
Variants
Views
Read
Edit
View history
More
Search
Navigation
Main page
Contents
Featured content
Current events
Random article
Donate to Wikipedia
Wikipedia store
Interaction
Help
About Wikipedia
Community portal
Recent changes
Contact page
Tools
What links here
Related changes
Upload file
Special pages
Permanent link
Page information
Wikidata item
Cite this page
Print/export
Create a book
Download as PDF
Printable version
Languages
العربية
Български
Català
Deutsch
Español
Français
Italiano
עברית
ქართული
Nederlands
日本語
Norsk
Polski
Português
Русский
Српски / srpski
Srpskohrvatski / српскохрватски
Türkçe
9 more
Edit links
This page was last edited on 4 October 2017, at 17:31.
Text is available under the Creative Commons Attribution-ShareAlike License; additional terms may apply. By using this site, you agree to the Terms of Use and Privacy Policy. Wikipedia® is a registered trademark of the Wikimedia Foundation, Inc., a non-profit organization.
Privacy policy
About Wikipedia
Disclaimers
Contact Wikipedia
Developers
Cookie statement
Mobile view
Enable previews

tag: div

attr: id class

value: mw-page-base noprint

key: html

type: local

value: mw-head-base noprint

tag: a

attr: id class lang

value: firstHeading firstHeading en

value: siteSub noprint

value: jump-to-nav mw-jump

tag: img

attr: alt src width height srcset data-file-width data-file-height

attr: href class

tag: td

attr: href title

attr: class href

value: Help:Introduction to referencing with Wiki Markup/1

tag: span

tag: i

tag: small

tag: tr

tag: tbody

value: plainlinks metadata ambox ambox-content ambox-Refimprove

value:
/wiki/File:Carthage_standard.svg
image
Carthage standard

value:
/wiki/Carthage_(state)
mw-redirect
Carthage (state)

value: Publius Claudius Pulcher (consul 249 BC)

value: Template talk:Campaignbox First Punic War

value:
/wiki/Battle_of_Tunis
mw-redirect
Battle of Tunis

value:
/wiki/Battle_of_Cape_Hermaeum
mw-redirect
Battle of Cape Hermaeum

value: Battle of Mount Ercte (page does not exist)

value: First Battle of Mount Eryx (page does not exist)

value: Second Battle of Mount Eryx (page does not exist)

value: nowraplinks collapsible autocollapse navbox-inner

value: Himilco (Punic War) (page does not exist)

value:
reflist mw-references-wrap
list-style-type: decimal;

value:
navbox-image
4
width:1px;padding:0px 0px 0px 2px

value:
/wiki/Hamilcar%27s_victory_with_Navaras
mw-redirect
Hamilcar's victory with Navaras

value:
/wiki/Siege_of_Carthage_(Mercenary_War)
mw-redirect
Siege of Carthage (Mercenary War)

value:
/wiki/Po_Valley_raid
mw-redirect
Po Valley raid

value:
/wiki/First_Battle_of_Nepheris
mw-redirect
First Battle of Nepheris

value: nowraplinks hlist collapsible =expanded navbox-inner

value: Maps, aerial photos, and other data for this location

value: Category:Naval battles of the First Punic War

value: Category:Articles needing additional references from September 2014

value: Category:All articles needing additional references

value: Discussion about edits from this IP address [ctrl-alt-n]

value: A list of edits made from this IP address [ctrl-alt-y]

value: You are encouraged to create an account and log in; however, it is not mandatory

value: You're encouraged to log in; however, it's not mandatory. [ctrl-alt-o]

value:
/wiki/Battle_of_Drepana
View the content page [ctrl-alt-c]
c

value: Discussion about the content page [ctrl-alt-t]

value: p-namespaces navigation vectorTabs p-namespaces-label

value:
p-variants
navigation
vectorMenu emptyPortlet
p-variants-label

value: Past revisions of this page [ctrl-alt-h]

value: p-views navigation vectorTabs p-views-label

value:
p-cactions
navigation
vectorMenu emptyPortlet
p-cactions-label

value:
mw-wiki-logo
/wiki/Main_Page
Visit the main page

value:
/wiki/Main_Page
Visit the main page [ctrl-alt-z]
z

value: Featured content – the best of Wikipedia

value: Find background information on current events

value:
/wiki/Special:Random
Load a random article [ctrl-alt-x]
x

value: معركة دريباناي – Arabic

value: Битка при Дрепана – Bulgarian

value:
interlanguage-link interwiki-bg
display: none;

value:
interlanguage-link interwiki-ca
display: none;

value: קרב דרפאנה – Hebrew

value:
interlanguage-link interwiki-he
display: none;

value: დრეპანის ბრძოლა – Georgian

value:
interlanguage-link interwiki-ka
display: none;

value:
interlanguage-link interwiki-nl
display: none;

value: ドレパナ沖の海戦 – Japanese

value:
interlanguage-link interwiki-no
display: none;

value:
interlanguage-link interwiki-pl
display: none;

value: Битва при Дрепане – Russian

value: Битка код Дрепане – Serbian

value:
interlanguage-link interwiki-sr
display: none;

value:
interlanguage-link interwiki-sh
display: none;

value: All languages (initial selection from common choices by you and others)

value: mediawiki ltr sitedir-ltr mw-hide-empty-elt ns-0 ns-subject page-Battle_of_Drepana rootpage-Battle_of_Drepana skin-vector action-view


text:
Field-effect transistor
From Wikipedia, the free encyclopedia
Jump to: navigation, search
"FET" redirects here. For other uses, see FET (disambiguation).
The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behaviour of the device. FETs are also known as unipolar transistors since they involve single-carrier-type operation. Many different implementations of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The conductivity between the drain and source terminals is controlled by an electric field in the device, which is generated by the voltage difference between the body and the gate of the device.
Contents
[hide]
1 History
2 Basic information
3 More about terminals
3.1 Effect of gate voltage on current
3.1.1 n-channel
3.1.2 p-channel
3.2 Effect of source/drain voltage on channel
4 Composition
5 Types
6 Advantages
7 Disadvantages
8 Failure Modes
9 Uses
10 Source-gated transistor
11 See also
12 References
13 External links
History[edit]
Main article: History of the transistor
The field-effect transistor was first patented by Julius Edgar Lilienfeld in 1926 and by Oskar Heil in 1934, but practical semiconducting devices (the junction field-effect transistors [JFETs]) were developed later after the transistor effect was observed and explained by the team of William Shockley at Bell Labs in 1947, immediately after the 20-year patent period eventually expired.
The first type of JFET was the static induction transistor (SIT), invented by Japanese engineers Jun-ichi Nishizawa and Y. Watanabe in 1950. The SIT is a type of JFET with a short channel length.[1] The metal–oxide–semiconductor field-effect transistor (MOSFET), which largely superseded the JFET and had a profound effect on digital electronic development, was invented by Dawon Kahng and Martin Atalla in 1959.[2]
Basic information[edit]
See also: Charge carrier § Majority and minority carriers
FETs can be majority-charge-carrier devices, in which the current is carried predominantly by majority carriers, or minority-charge-carrier devices, in which the current is mainly due to a flow of minority carriers.[3] The device consists of an active channel through which charge carriers, electrons or holes, flow from the source to the drain. Source and drain terminal conductors are connected to the semiconductor through ohmic contacts. The conductivity of the channel is a function of the potential applied across the gate and source terminals.
The FET's three terminals are:[4]
source (S), through which the carriers enter the channel. Conventionally, current entering the channel at S is designated by IS.
drain (D), through which the carriers leave the channel. Conventionally, current entering the channel at D is designated by ID. Drain-to-source voltage is VDS.
gate (G), the terminal that modulates the channel conductivity. By applying voltage to G, one can control ID.
More about terminals[edit]
Cross section of an n-type MOSFET
All FETs have source, drain, and gate terminals that correspond roughly to the emitter, collector, and base of BJTs. Most FETs have a fourth terminal called the body, base, bulk, or substrate. This fourth terminal serves to bias the transistor into operation; it is rare to make non-trivial use of the body terminal in circuit designs, but its presence is important when setting up the physical layout of an integrated circuit. The size of the gate, length L in the diagram, is the distance between source and drain. The width is the extension of the transistor, in the direction perpendicular to the cross section in the diagram (i.e., into/out of the screen). Typically the width is much larger than the length of the gate. A gate length of 1 µm limits the upper frequency to about 5 GHz, 0.2 µm to about 30 GHz.
The names of the terminals refer to their functions. The gate terminal may be thought of as controlling the opening and closing of a physical gate. This gate permits electrons to flow through or blocks their passage by creating or eliminating a channel between the source and drain. Electron-flow from the source terminal towards the drain terminal is influenced by an applied voltage. The body simply refers to the bulk of the semiconductor in which the gate, source and drain lie. Usually the body terminal is connected to the highest or lowest voltage within the circuit, depending on the type of the FET. The body terminal and the source terminal are sometimes connected together since the source is often connected to the highest or lowest voltage within the circuit, although there are several uses of FETs which do not have such a configuration, such as transmission gates and cascode circuits.
Effect of gate voltage on current[edit]
I–V characteristics and output plot of a JFET n-channel transistor.
Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve(transfer characteristics) in an n-channel nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V.
FET conventional symbol types
The FET controls the flow of electrons (or electron holes) from the source to drain by affecting the size and shape of a 'conductive channel' created and influenced by voltage (or lack of voltage) applied across the gate and source terminals. (For simplicity, this discussion assumes that the body and source are connected.) This conductive channel is the "stream" through which electrons flow from source to drain.
n-channel[edit]
In an n-channel 'depletion-mode' device, a negative gate-to-source voltage causes a depletion region to expand in width and encroach on the channel from the sides, narrowing the channel. If the active region expands to completely close the channel, the resistance of the channel from source to drain becomes large, and the FET is effectively turned off like a switch (see right figure, when there is very small current). This is called 'pinch-off', and the voltage at which it occurs is called the 'pinch-off voltage'. Conversely, a positive gate-to-source voltage increases the channel size and allows electrons to flow easily (see right figure, when there is a conduction channel and current is large).
In an n-channel 'enhancement-mode' device, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one. The positive voltage attracts free-floating electrons within the body towards the gate, forming a conductive channel. But first, enough electrons must be attracted near the gate to counter the dopant ions added to the body of the FET; this forms a region with no mobile carriers called a depletion region, and the voltage at which this occurs is referred to as the threshold voltage of the FET. Further gate-to-source voltage increase will attract even more electrons towards the gate which are able to create a conductive channel from source to drain; this process is called inversion.
p-channel[edit]
In a p-channel 'depletion-mode' device, a positive voltage from gate to body creates a depletion layer by forcing the positively charged holes to the gate-insulator/semiconductor interface, leaving exposed a carrier-free region of immobile, negatively charged acceptor ions. Conversely, in a p-channel 'enhancement-mode' device, a conductive region does not exist and negative voltage must be used to generate a conduction channel.
Effect of source/drain voltage on channel[edit]
For either enhancement- or depletion-mode devices, at drain-to-source voltages much less than gate-to-source voltages, changing the gate voltage will alter the channel resistance, and drain current will be proportional to drain voltage (referenced to source voltage). In this mode the FET operates like a variable resistor and the FET is said to be operating in a linear mode or ohmic mode.[5][6]
If drain-to-source voltage is increased, this creates a significant asymmetrical change in the shape of the channel due to a gradient of voltage potential from source to drain. The shape of the inversion region becomes "pinched-off" near the drain end of the channel. If drain-to-source voltage is increased further, the pinch-off point of the channel begins to move away from the drain towards the source. The FET is said to be in saturation mode;[7] although some authors refer to it as active mode, for a better analogy with bipolar transistor operating regions.[8][9] The saturation mode, or the region between ohmic and saturation, is used when amplification is needed. The in-between region is sometimes considered to be part of the ohmic or linear region, even where drain current is not approximately linear with drain voltage.
Even though the conductive channel formed by gate-to-source voltage no longer connects source to drain during saturation mode, carriers are not blocked from flowing. Considering again an n-channel enhancement-mode device, a depletion region exists in the p-type body, surrounding the conductive channel and drain and source regions. The electrons which comprise the channel are free to move out of the channel through the depletion region if attracted to the drain by drain-to-source voltage. The depletion region is free of carriers and has a resistance similar to silicon. Any increase of the drain-to-source voltage will increase the distance from drain to the pinch-off point, increasing the resistance of the depletion region in proportion to the drain-to-source voltage applied. This proportional change causes the drain-to-source current to remain relatively fixed, independent of changes to the drain-to-source voltage, quite unlike its ohmic behavior in the linear mode of operation. Thus, in saturation mode, the FET behaves as a constant-current source rather than as a resistor, and can effectively be used as a voltage amplifier. In this case, the gate-to-source voltage determines the level of constant current through the channel.
Composition[edit]
FETs can be constructed from various semiconductors, with silicon being by far the most common. Most FETs are made by using conventional bulk semiconductor processing techniques, using a single crystal semiconductor wafer as the active region, or channel.
Among the more unusual body materials are amorphous silicon, polycrystalline silicon or other amorphous semiconductors in thin-film transistors or organic field-effect transistors (OFETs) that are based on organic semiconductors; often, OFET gate insulators and electrodes are made of organic materials, as well. Such FETs are manufactured using a variety of materials such as silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), and indium gallium arsenide (InGaAs).
In June 2011, IBM announced that it had successfully used graphene-based FETs in an integrated circuit.[10][11] These transistors are capable of about 2.23 GHz cutoff frequency, much higher than standard silicon FETs.[12]
Types[edit]
Depletion-type FETs under typical voltages: JFET, poly-silicon MOSFET, double-gate MOSFET, metal-gate MOSFET, MESFET.
Depletion
Electrons
Holes
Metal
Insulator
Top: source, bottom: drain, left: gate, right: bulk. Voltages that lead to channel formation are not shown.
The channel of a FET is doped to produce either an n-type semiconductor or a p-type semiconductor. The drain and source may be doped of opposite type to the channel, in the case of enhancement mode FETs, or doped of similar type to the channel as in depletion mode FETs. Field-effect transistors are also distinguished by the method of insulation between channel and gate. Types of FETs include:
The JFET (junction field-effect transistor) uses a reverse biased p–n junction to separate the gate from the body.
The MOSFET (metal–oxide–semiconductor field-effect transistor) utilizes an insulator (typically SiO2) between the gate and the body.
The MNOS Metal-Nitride-Oxide-Semiconductor transistor utilizes an nitride-oxide layer insulator between the gate and the body.
The DGMOSFET (Dual-gate MOSFET), a FET with two insulated gates.
The DEPFET is a FET formed in a fully depleted substrate and acts as a sensor, amplifier and memory node at the same time. It can be used as an image (photon) sensor.
The FREDFET (fast-reverse or fast-recovery epitaxial diode FET) is a specialized FET designed to provide a very fast recovery (turn-off) of the body diode.
The HIGFET (heterostructure insulated gate field-effect transistor) is now used mainly in research.[13]
The MODFET (modulation-doped field-effect transistor) is a high-electron-mobility transistor using a quantum well structure formed by graded doping of the active region.
The TFET (tunnel field-effect transistor) is based on band-to-band tunneling.[14]
The IGBT (insulated-gate bipolar transistor) is a device for power control. It has a structure akin to a MOSFET coupled with a bipolar-like main conduction channel. These are commonly used for the 200–3000 V drain-to-source voltage range of operation. Power MOSFETs are still the device of choice for drain-to-source voltages of 1 to 200 V.
The HEMT (high-electron-mobility transistor), also called a HFET (heterostructure FET), can be made using bandgap engineering in a ternary semiconductor such as AlGaAs. The fully depleted wide-band-gap material forms the isolation between gate and body.
The ISFET (ion-sensitive field-effect transistor) can be used to measure ion concentrations in a solution; when the ion concentration (such as H+, see pH electrode) changes, the current through the transistor will change accordingly.
The BioFET (Biologically sensitive field-effect transistor) is a class of sensors/biosensors based on ISFET technology which are utilized to detect charged molecules; when a charged molecule is present, changes in the electrostatic field at the BioFET surface result in a measurable change in current through the transistor. These include EnFETs, ImmunoFETs, GenFETs, DNAFETs, CPFETs, BeetleFETs, and FETs based on ion-channels/protein binding.[15]
The MESFET (metal–semiconductor field-effect transistor) substitutes the p–n junction of the JFET with a Schottky barrier; and is used in GaAs and other III-V semiconductor materials.
The NOMFET is a nanoparticle organic memory field-effect transistor.[16]
The GNRFET (graphene nanoribbon field-effect transistor) uses a graphene nanoribbon for its channel.[17]
The VeSFET (vertical-slit field-effect transistor) is a square-shaped junctionless FET with a narrow slit connecting the source and drain at opposite corners. Two gates occupy the other corners, and control the current through the slit.[18]
The CNTFET (carbon nanotube field-effect transistor).
The OFET (organic field-effect transistor) uses an organic semiconductor in its channel.
The DNAFET (DNA field-effect transistor) is a specialized FET that acts as a biosensor, by using a gate made of single-strand DNA molecules to detect matching DNA strands.
The QFET (quantum field effect transistor) takes advantage of quantum tunneling to greatly increase the speed of transistor operation by eliminating the traditional transistor's area of electron conduction.
Advantages[edit]
One advantage of the FET is its high gate to main current resistance, on the order of 100 MΩ or more, thus providing a high degree of isolation between control and flow. Because base current noise will increase with shaping time,[19] a FET typically produces less noise than a bipolar junction transistor (BJT), and is thus found in noise sensitive electronics such as tuners and low-noise amplifiers for VHF and satellite receivers. It is relatively immune to radiation. It exhibits no offset voltage at zero drain current and hence makes an excellent signal chopper. It typically has better thermal stability than a BJT.[4] Because they are controlled by gate charge, once the gate is closed or opened, there is no additional power draw, as there would be with a bipolar junction transistor or with non-latching relays in some states. This allows extremely low-power switching, which in turn allows greater miniaturization of circuits because heat dissipation needs are reduced compared to other types of switches.
Disadvantages[edit]
It has a relatively low gain–bandwidth product compared to a BJT. The MOSFET has a drawback of being very susceptible to overload voltages, thus requiring special handling during installation.[20] The fragile insulating layer of the MOSFET between the gate and channel makes it vulnerable to electrostatic discharge or changes to threshold voltage during handling. This is not usually a problem after the device has been installed in a properly designed circuit.
FETs often have a very low 'on' resistance and have a high 'off' resistance. However the intermediate resistances are significant, and so FETs can dissipate large amounts of power while switching. Thus efficiency can put a premium on switching quickly, but this can cause transients that can excite stray inductances and generate significant voltages that can couple to the gate and cause unintentional switching. FET circuits can therefore require very careful layout and can involve trades between switching speed and power dissipation. There is also a trade-off between voltage rating and 'on' resistance, so high voltage FETs have a relatively high 'on' resistance and hence conduction losses.
Failure Modes[edit]
FETs are relatively robust, especially when operated within the temperature and electrical limitations defined by the manufacturer (proper derating). However, modern FET devices can often incorporate a body diode as part of the overall functionality. If the characteristics of the body diode are not taken into consideration, the FET can experience slow body diode behavior, where a parasitic transistor will turn on and allow high current to be drawn from drain to source when the FET is off.[21]
Uses[edit]
The most commonly used FET is the MOSFET. The CMOS (complementary metal oxide semiconductor) process technology is the basis for modern digital integrated circuits. This process technology uses an arrangement where the (usually "enhancement-mode") p-channel MOSFET and n-channel MOSFET are connected in series such that when one is ON, the other is OFF.
In FETs, electrons can flow in either direction through the channel when operated in the linear mode. The naming convention of drain terminal and source terminal is somewhat arbitrary, as the devices are typically (but not always) built symmetrically from source to drain. This makes FETs suitable for switching analog signals between paths (multiplexing). With this concept, one can construct a solid-state mixing board, for example.
A common use of the FET is as an amplifier. For example, due to its large input resistance and low output resistance, it is effective as a buffer in common-drain (source follower) configuration.
IGBTs are used in switching internal combustion engine ignition coils, where fast switching and voltage blocking capabilities are important.
Source-gated transistor[edit]
Source-gated transistors are more robust to manufacturing and environmental issues in large-area electronics such as display screens, but are slower in operation than FETs.[22]
See also[edit]
Chemical field-effect transistor
FET amplifier
FlowFET
Multigate device, especially FinFET
References[edit]
Jump up ^ Junction Field-Effect Devices, Semiconductor Devices for Power Conditioning, 1982
Jump up ^ 1960 - Metal Oxide Semiconductor (MOS) Transistor Demonstrated - The Silicon Engine | Computer History Museum
Jump up ^ Jacob Millman (1985). Electronic devices and circuits. Singapore: McGraw-Hill International. p. 397. ISBN 0-07-085505-6.
^ Jump up to: a b Millman (1985). Electronic devices and circuits. Singapore: McGraw-Hill. pp. 384–385. ISBN 0-07-085505-6.
Jump up ^ C Galup-Montoro; Schneider MC (2007). MOSFET modeling for circuit analysis and design. London/Singapore: World Scientific. p. 83. ISBN 981-256-810-7.
Jump up ^ Norbert R Malik (1995). Electronic circuits: analysis, simulation, and design. Englewood Cliffs, NJ: Prentice Hall. pp. 315–316. ISBN 0-02-374910-5.
Jump up ^ RR Spencer; Ghausi MS (2001). Microelectronic circuits. Upper Saddle River NJ: Pearson Education/Prentice-Hall. p. 102. ISBN 0-201-36183-3.
Jump up ^ A. S. Sedra; K.C. Smith (2004). Microelectronic circuits (Fifth ed.). New York: Oxford. p. 552. ISBN 0-19-514251-9.
Jump up ^ PR Gray; PJ Hurst; SH Lewis; RG Meyer (2001). Analysis and design of analog integrated circuits (Fourth ed.). New York: Wiley. pp. §1.5.2 p. 45. ISBN 0-471-32168-0.
Jump up ^ IBM creates first graphene based integrated circuit
Jump up ^ Lin, Y.-M.; Valdes-Garcia, A.; Han, S.-J.; Farmer, D. B.; Sun, Y; Wu, Y; Dimitrakopoulos, C.; Grill, A; Avouris, P & Jenkins, K. A. (2011). "Wafer-Scale Graphene Integrated Circuit". Science. 332: 1294–1297. doi:10.1126/science.1204428. PMID 21659599.
Jump up ^ Flexible graphene transistor sets new records - physicsworld.com
Jump up ^ freepatentsonline.com, HIGFET and method - Motorola
Jump up ^ Ionescu, A. M.; Riel, H. (2011). "Tunnel field-effect transistors as energy-efficient electronic switches". Nature. 479 (7373): 329–337. doi:10.1038/nature10679. PMID 22094693.
Jump up ^ Poghossianb, Arshak (2002). "Recent advances in biologically sensitive field-effect transistors (BioFETs)". Analyst. 127: 1137–1151. doi:10.1039/B204444G.
Jump up ^ sciencedaily.com
Jump up ^ Sarvari H, et al. (2011). "Frequency analysis of graphene nanoribbon FET by Non-Equilibrium Green's Function in mode space". Physica E: Low-dimensional Systems and Nanostructures. 43 (8): 1509–1513. doi:10.1016/j.physe.2011.04.018.
Jump up ^ Jerzy Ruzyllo (2016-09-15). Semiconductor Glossary: A Resource for Semiconductor Community. World Scientific. pp. 244–. ISBN 978-981-4749-56-5.
Jump up ^ physics.lbl.gov
Jump up ^ Allen Mottershead (2004). Electronic devices and circuits. New Delhi: Prentice-Hall of India. ISBN 81-203-0124-2.
Jump up ^ Slow Body Diode Failures of Field Effect Transistors (FETs): A Case Study, https://www.dfrsolutions.com/hubfs/Resources/Slow_Body_Diode_Failures.pdf?t=1513022462214
Jump up ^ "Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits"
External links[edit]
Wikimedia Commons has media related to Field-effect Transistors.
PBS The Field Effect Transistor
Junction Field Effect Transistor
CMOS gate circuitry
Winning the Battle Against Latchup in CMOS Analog Switches
Field Effect Transistors in Theory and Practice
The Field Effect Transistor as a Voltage Controlled Resistor
[show]
v
t
e
Transistor amplifiers
Bipolar junction transistor:
Common emitter
Common collector
Common base
Field-effect transistor:
Common source
Common drain
Common gate
Multiple transistors:
Darlington transistor
Sziklai pair
Cascode
Long-tailed pair
[show]
v
t
e
Electronic components
Semiconductor devices
Avalanche diode
Transistor
Tetrode transistor
Pentode transistor
Memistor
Memristor
Bipolar junction transistor (BJT)
FinFET
CMOS
MOSFET
JFET
Field-effect transistor (FET)
Quantum circuit
Constant-current diode (CLD, CRD)
Darlington transistor
DIAC
Diode
Heterostructure barrier varactor
Insulated-gate bipolar transistor (IGBT)
Integrated circuit (IC)
Light-emitting diode (LED)
Photodetector
Photodiode
PIN diode
Schottky diode
Silicon controlled rectifier (SCR)
Thyristor
TRIAC
Unijunction transistor (UJT)
Varicap
Zener diode
Voltage regulators
Linear regulator
Low-dropout regulator
Switching regulator
Buck
Boost
Buck–boost
Split-pi
Ćuk
SEPIC
Charge pump
Switched capacitor
Vacuum tubes
Acorn tube
Audion
Beam tetrode
Barretter
Compactron
Diode
Fleming valve
Nonode
Nuvistor
Pentagrid (Hexode, Heptode, Octode)
Pentode
Photomultiplier
Phototube
Tetrode
Triode
Vacuum tubes (RF)
Backward-wave oscillator (BWO)
Cavity magnetron
Crossed-field amplifier (CFA)
Gyrotron
Inductive output tube (IOT)
Klystron
Maser
Sutton tube
Traveling-wave tube (TWT)
Cathode ray tubes
Beam deflection tube
Charactron
Iconoscope
Magic eye tube
Monoscope
Selectron tube
Storage tube
Trochotron
Video camera tube
Williams tube
Gas-filled tubes
Cold cathode
Crossatron
Dekatron
Ignitron
Krytron
Mercury-arc valve
Neon lamp
Nixie tube
Thyratron
Trigatron
Voltage-regulator tube
Adjustable
Potentiometer
digital
Variable capacitor
Varicap
Passive
Connector
audio and video
electrical power
RF
Electrolytic detector
Ferrite
Fuse
resettable
Resistor
Switch
Thermistor
Transformer
Varistor
Wire
Wollaston wire
Reactive
Capacitor
types
Ceramic resonator
Crystal oscillator
Inductor
Parametron
Relay
reed relay
mercury switch
Authority control
LCCN: sh85048099
GND: 4131472-4
NDL: 01150221
Retrieved from "https://en.wikipedia.org/w/index.php?title=Field-effect_transistor&oldid=819437468"
Categories:
Transistor types
FETs
Hidden categories:
Wikipedia articles with LCCN identifiers
Wikipedia articles with GND identifiers
Navigation menu
Personal tools
Not logged in
Talk
Contributions
Create account
Log in
Namespaces
Article
Talk
Variants
Views
Read
Edit
View history
More
Search
Navigation
Main page
Contents
Featured content
Current events
Random article
Donate to Wikipedia
Wikipedia store
Interaction
Help
About Wikipedia
Community portal
Recent changes
Contact page
Tools
What links here
Related changes
Upload file
Special pages
Permanent link
Page information
Wikidata item
Cite this page
Print/export
Create a book
Download as PDF
Printable version
In other projects
Wikimedia Commons
Languages
العربية
বাংলা
Беларуская
Беларуская (тарашкевіца)
Български
Bosanski
Català
Čeština
Dansk
Deutsch
Eesti
Español
Estremeñu
فارسی
Français
한국어
Bahasa Indonesia
Italiano
Basa Jawa
Қазақша
Latviešu
Lietuvių
Македонски
Монгол
Nederlands
日本語
Polski
Português
Română
Русский
Seeltersk
Slovenčina
Slovenščina
Српски / srpski
Srpskohrvatski / српскохрватски
Suomi
Svenska
தமிழ்
Türkçe
Українська
Tiếng Việt
中文
Edit links
This page was last edited on 9 January 2018, at 10:51.
Text is available under the Creative Commons Attribution-ShareAlike License; additional terms may apply. By using this site, you agree to the Terms of Use and Privacy Policy. Wikipedia® is a registered trademark of the Wikimedia Foundation, Inc., a non-profit organization.
Privacy policy
About Wikipedia
Disclaimers
Contact Wikipedia
Developers
Cookie statement
Mobile view
Enable previews

value: mw-page-base noprint

value: mw-head-base noprint

value: firstHeading firstHeading en

value: siteSub noprint

value: jump-to-nav mw-jump

attr: href class title

value:
/wiki/FET_(disambiguation)
mw-redirect mw-disambig
FET (disambiguation)

attr: role class

value:
note
hatnote navigation-not-searchable

attr: role tabindex class

value: button 0 togglelink

attr: class dir xml:lang

value: toctitle ltr en

value:
/wiki/Junction_field-effect_transistor
mw-redirect
Junction field-effect transistor

attr: alt src width height class srcset data-file-width data-file-height

value:
/wiki/Biasing_(electronics)
mw-redirect
Biasing (electronics)

value: Edit section: Effect of gate voltage on current

value:
/wiki/Depletion_zone
mw-redirect
Depletion zone

value: Edit section: Effect of source/drain voltage on channel

value:
/wiki/Charge_carriers
mw-redirect
Charge carriers

value:
/wiki/Semiconductor_fabrication
mw-redirect
Semiconductor fabrication

value: display:inline-block; width:1.5em; height:1.5em; margin:1px 0; border:1px solid black; background-color: #808080; color:black; font-size:100%; text-align:center;

value: -webkit-column-break-inside: avoid;page-break-inside: avoid;break-inside: avoid-column

value: display:inline-block; width:1.5em; height:1.5em; margin:1px 0; border:1px solid black; background-color: #0000FF; color:black; font-size:100%; text-align:center;

value: display:inline-block; width:1.5em; height:1.5em; margin:1px 0; border:1px solid black; background-color: #FF0000; color:black; font-size:100%; text-align:center;

value: display:inline-block; width:1.5em; height:1.5em; margin:1px 0; border:1px solid black; background-color: #000000; color:black; font-size:100%; text-align:center;

value: display:inline-block; width:1.5em; height:1.5em; margin:1px 0; border:1px solid black; background-color:white; color:black; font-size:100%; text-align:center;

value:
/wiki/Electrical_insulation
mw-redirect
Electrical insulation

value:
/wiki/Dual-gate_MOSFET
mw-redirect
Dual-gate MOSFET

value:
/wiki/PH_electrode
mw-redirect
PH electrode

value: Enzyme Modified FET (page does not exist)

value: Immunologically modified FET (page does not exist)

value:
/wiki/III-V_semiconductor
mw-redirect
III-V semiconductor

value:
/wiki/Graphene_nanoribbons
mw-redirect
Graphene nanoribbons

value:
/wiki/Quantum_field_effect_transistor
mw-redirect
Quantum field effect transistor

value:
/wiki/Mixing_board
mw-redirect
Mixing board

value:
/wiki/McGraw-Hill_International
mw-redirect
McGraw-Hill International

value:
nofollow
external text
//doi.org/10.1126%2Fscience.1204428

value:
/wiki/PubMed_Identifier
mw-redirect
PubMed Identifier

value:
nofollow
external text
//www.ncbi.nlm.nih.gov/pubmed/21659599

value:
nofollow
external text
//doi.org/10.1038%2Fnature10679

value:
nofollow
external text
//www.ncbi.nlm.nih.gov/pubmed/22094693

value:
nofollow
external text
//doi.org/10.1039%2FB204444G

value:
nofollow
external text
//doi.org/10.1016%2Fj.physe.2011.04.018

value:
navbox-image
3
width:1px;padding:0px 2px 0px 0px

value:
navbox-image
3
width:1px;padding:0px 0px 0px 2px

value: nowraplinks collapsible autocollapse navbox-inner

value:
/wiki/Switching_regulator
mw-redirect
Switching regulator

value:
/wiki/Vacuum_diode
mw-redirect
Vacuum diode

value: Audio and video interfaces and connectors

value:
nofollow
external text
https://d-nb.info/gnd/4131472-4

value: Category:Wikipedia articles with LCCN identifiers

value: Category:Wikipedia articles with GND identifiers

value: Discussion about edits from this IP address [ctrl-alt-n]

value: A list of edits made from this IP address [ctrl-alt-y]

value: You are encouraged to create an account and log in; however, it is not mandatory

value: You're encouraged to log in; however, it's not mandatory. [ctrl-alt-o]

value:
/wiki/Field-effect_transistor
View the content page [ctrl-alt-c]
c

value: Discussion about the content page [ctrl-alt-t]

value: p-namespaces navigation vectorTabs p-namespaces-label

value:
p-variants
navigation
vectorMenu emptyPortlet
p-variants-label

value: Past revisions of this page [ctrl-alt-h]

value: p-views navigation vectorTabs p-views-label

value:
p-cactions
navigation
vectorMenu emptyPortlet
p-cactions-label

value: portal navigation p-navigation p-navigation-label

value: Guidance on how to use and edit Wikipedia

value: About the project, what you can do, where to find things

value: A list of recent changes in the wiki [ctrl-alt-r]

value: portal navigation p-interaction p-interaction-label

value: List of all English Wikipedia pages containing links to this page [ctrl-alt-j]

value: Recent changes in pages linked from this page [ctrl-alt-k]

value:
/wiki/Wikipedia:File_Upload_Wizard
Upload files [ctrl-alt-u]
u

value: A list of all special pages [ctrl-alt-q]

value: Permanent link to this revision of the page

value: Link to connected data repository item [ctrl-alt-g]

value: Printable version of this page [ctrl-alt-p]

value: portal navigation p-wikibase-otherprojects p-wikibase-otherprojects-label

value:
uls-settings-trigger
Language settings
0
button
true

value: ترانزستور ذو مفعول حقلي – Arabic

value: ফিল্ড-ইফেক্ট ট্রানজিস্টর – Bangla

value: Палявы транзістар – Belarusian

value: Палявы транзыстар – Belarusian (Taraškievica orthography)

value: Полеви транзистор – Bulgarian

value:
https://ext.wikipedia.org/wiki/FET
FET – Extremaduran
ext
ext
interlanguage-link-target

value: ترانزیستور اثر میدان – Persian

value: 장효과 트랜지스터 – Korean

value: Өрісті транзистор – Kazakh

value: Транзистор со ефект на поле – Macedonian

value: Оронгийн транзистор – Mongolian

value: 電界効果トランジスタ – Japanese

value: Transistor de efeito de campo – Portuguese

value: Полевой транзистор – Russian

value: Fäild-Effekt-Transistore – Saterland Frisian

value: Транзистор са ефектом поља – Serbian

value: Tranzistor sa efektom polja – Serbo-Croatian

value: மின்புல விளைவுத் திரிதடையம் – Tamil

value: Польовий транзистор – Ukrainian

value: /static/images/wikimedia-button-1.5x.png 1.5x, /static/images/wikimedia-button-2x.png 2x

value: /static/images/poweredby_mediawiki_132x47.png 1.5x, /static/images/poweredby_mediawiki_176x62.png 2x

value:
suggestions
display: none; font-size: 13px;

value: mediawiki ltr sitedir-ltr mw-hide-empty-elt ns-0 ns-subject page-Field-effect_transistor rootpage-Field-effect_transistor skin-vector action-view